The relentless drive for higher data rates and more sophisticated sensing capabilities in modern electronics has pushed operational frequencies into the Ka-band and beyond. At these microwave and millimeter-wave frequencies, the performance of individual components becomes paramount. The **HMC928LP5E** stands out as a critical enabler for these advanced systems, representing a high-performance **GaAs MMIC Medium Power Amplifier** engineered specifically for demanding 24 GHz applications.
Fabricated on a Gallium Arsenide (GaAs) substrate using a high-reliability 0.15 µm pHEMT process, the HMC928LP5E is designed to deliver exceptional signal amplification where it is needed most. Its core functionality is to provide a significant **gain of 22 dB** while delivering a robust **+22 dBm of saturated output power (Psat)**. This combination of high gain and medium power handling makes it an ideal solution for boosting signal strength in the transmit chain of various systems, ensuring signals can be propagated effectively over the required distances.
A key metric for power amplifiers in any frequency band is linearity, which directly impacts signal integrity. The HMC928LP5E excels with an output third-order intercept point (OIP3) of **+32 dBm**, a figure that underscores its excellent linear performance. This high linearity is crucial for complex modulation schemes used in modern communications, such as QAM, as it minimizes distortion and preserves data fidelity. Furthermore, the amplifier integrates on-chip bias control, simplifying the external circuitry required for stable operation over temperature variations.
The applicability of this MMIC amplifier is vast. It serves as a fundamental building block in **24 GHz ISM band industrial radars** for collision avoidance and precision sensing. In the telecommunications sector, it is instrumental in the development of **point-to-point microwave backhaul links** that form the backbone of cellular networks, enabling high-capacity data transfer between base stations. Additionally, its performance characteristics make it suitable for test and measurement equipment, satellite communications, and emerging phased array systems.
Housed in a compact, RoHS-compliant 5x5 mm QFN32 leadless package, the HMC928LP5E is designed for surface-mount technology (SMT), facilitating high-volume manufacturing and integration into densely populated PCBs. This small form factor is essential for the ongoing miniaturization of RF systems without compromising on power or performance.
**ICGOOODFIND**: The HMC928LP5E is a superior GaAs pHEMT MMIC power amplifier that delivers an optimal blend of high gain, excellent linearity, and medium power output at 24 GHz. Its robust performance and integrated design make it an indispensable component for advancing the capabilities of next-generation microwave systems, from automotive radar to network infrastructure.
**Keywords**: **24 GHz Amplifier**, **GaAs MMIC**, **Medium Power Amplifier**, **Ka-band**, **Output IP3**
