Infineon IPP65R110CFDA: The 110 mΩ Superjunction MOSFET Driving High-Efficiency Power Conversion

In the rapidly evolving field of power electronics, efficiency, power density, and thermal performance are paramount. The Infineon IPP65R110CFDA stands out as a high-performance Superjunction MOSFET engineered to meet these demanding requirements. With an ultra-low on-state resistance (RDS(on)) of just 110 mΩ, this device is optimized for high-efficiency power conversion across a wide range of applications, including server and telecom SMPS (Switch-Mode Power Supplies), industrial motor drives, solar inverters, and automotive systems.

A key strength of this MOSFET lies in its advanced CoolMOS™ CFD7 superjunction technology. This technology strikes an exceptional balance between minimal switching losses and low conduction losses. The result is a device that operates with significantly reduced energy dissipation, enabling systems to achieve higher efficiency ratings, which is critical for meeting modern energy standards like 80 PLUS Titanium in server PSUs. The reduced losses also translate directly into lower operating temperatures, enhancing system reliability and longevity while potentially simplifying thermal management designs.

The IPP65R110CFDA is also characterized by its excellent switching behavior and high robustness. It features a low gate charge (Qg) and low effective output capacitance (Coss(eff)), which are vital for high-frequency switching operations. This allows power supply designers to push switching frequencies higher, leading to the use of smaller passive components like inductors and capacitors, and ultimately, an increase in overall power density. Furthermore, its avalanche ruggedness and intrinsic fast body diode ensure reliable operation in harsh environments and under extreme conditions, such as during hard commutation events in bridge topologies.

Packaged in the industry-standard TO-220 FullPAK, the device offers a familiar footprint for designers while providing enhanced creepage and clearance distances for improved safety in high-voltage applications. Its high thermal cycling capability ensures durability, making it a robust choice for applications subject to frequent load changes.

ICGOOODFIND: The Infineon IPP65R110CFDA exemplifies the progress in semiconductor technology, offering a powerful combination of ultra-low conduction loss, superior switching performance, and high reliability. It is an optimal component for designers aiming to push the boundaries of efficiency and power density in next-generation power conversion systems.

Keywords: Superjunction MOSFET, High-Efficiency, Low RDS(on), Power Conversion, CoolMOS™ CFD7