Infineon IPG20N04S4L-11A OptiMOS 5 Power MOSFET: High-Efficiency Performance for Automotive and Industrial Applications
The demand for highly efficient and reliable power management solutions continues to grow across automotive and industrial sectors. Infineon’s IPG20N04S4L-11A, part of the OptiMOS™ 5 power MOSFET family, stands out as a key component designed to meet stringent performance requirements. Combining low on-state resistance, high switching speed, and superior thermal performance, this MOSFET is engineered to enhance efficiency and power density in a wide range of applications.
With a voltage rating of 40 V and a continuous drain current of 11 A, the IPG20N04S4L-11A is particularly suited for automotive applications such as electric power steering (EPS), DC-DC converters, and motor control systems. Its ultra-low RDS(on) of 11 mΩ ensures minimal conduction losses, which is critical for improving overall system efficiency and reducing heat generation. This allows designers to achieve higher power density without compromising thermal management.
In industrial environments, this MOSFET excels in power supplies, motor drives, and battery management systems (BMS). The device’s optimized switching characteristics help reduce electromagnetic interference (EMI), making it easier to comply with industry standards. Additionally, its enhanced avalanche ruggedness and high operational reliability ensure long-term performance even under demanding conditions.

The OptiMOS™ 5 technology also emphasizes sustainability by contributing to energy savings in end applications. Its leadless D2PAK (TO-263) package offers improved thermal resistance and power dissipation, supporting more compact and lighter designs. This is particularly beneficial for electric vehicles (EVs) and portable industrial equipment where space and weight are critical constraints.
ICGOOODFIND:
The Infineon IPG20N04S4L-11A OptiMOS™ 5 MOSFET sets a high standard for power efficiency and reliability in both automotive and industrial systems. Its combination of low RDS(on), high current handling, and robust thermal performance makes it an ideal choice for next-generation power electronics.
Keywords:
Power MOSFET, OptiMOS 5, Automotive Applications, High Efficiency, Low RDS(on)
